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- W2102091297 abstract "Ultrahigh purity GaAs reproducibly grown by liquid phase epitaxy is reported. The attained purities, as represented by 77-K electron concentration as low as 4.1×10 12 cm -3 and mobility as high as 287000 cm 2 /Vs for n-type, and hole concentration as low as 2.6×10 12 cm -3 and hole mobility as high as 21200 cm 2 /Vs for p-type, are the highest reported so far. These high mobilities appear to be attainable only by conventional solution baking in hydrogen with a wide O 2 concentration range of 0.007-1.34 ppm at 800°C for a time proportional to W 4/3 , where W is Ga quantity. Whether we get the UHP p- or n-type depends on a critical term which is peculiar to the Ga quality. Secondary ion mass spectrography trace profile analyses show that the impurities effectively eliminated during the solution baking are S, Si and even C." @default.
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- W2102091297 date "1993-09-01" @default.
- W2102091297 modified "2023-10-09" @default.
- W2102091297 title "Ultrahigh Purity Liquid Phase Epitaxial Growth of GaAs" @default.
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- W2102091297 doi "https://doi.org/10.1143/jjap.32.3692" @default.
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