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• W2102161808 abstract "A p-type amorphous tungsten oxide (p-a-WO 3 ) film was prepared using a vacuum thermal evaporator with a WO 3 source. By replacing a 10 nm-thick p-type amorphous silicon carbide window layer of a pin-type amorphous silicon based solar cell with a 10 nm-thick p-a-WO 3 film, the short circuit current density increased from 12.75 to 13.83 mA/cm2. Although the open circuit voltage was limited to 0.65 V due to the smaller work function of the p-a-WO 3 , the a-Si based solar cell with the novel p-a-WO 3 window layer has shown a conversion efficiency of 6.05 %. Our research opens a new application field for thin film solar cells." @default.
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• W2102161808 date "2010-06-01" @default.
• W2102161808 modified "2023-09-26" @default.
• W2102161808 title "Tungsten oxide as a p-type window material in amorphous silicon solar cells" @default.
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• W2102161808 doi "https://doi.org/10.1109/pvsc.2010.5614478" @default.
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