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- W2102323651 abstract "The physical mechanisms responsible for superior crosstalk suppression are identified in a new class of silicon-on-insulator substrate (GPSOI) that incorporates a buried metallic ground plane below the active silicon and buried oxide layers. It has been shown that this technology exhibits a factor of ten reduction in crosstalk power between components through the substrate compared to existing state-of-the-art silicon-based substrates using standard s/sub 21/ magnitude measurements in a microwave coplanar transmission test structure. The dominant crosstalk mechanisms are identified and compared to other existing crosstalk suppression technologies using numerical electromagnetic simulations and lumped element compact model development." @default.
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- W2102323651 date "2002-11-13" @default.
- W2102323651 modified "2023-09-27" @default.
- W2102323651 title "Physics and compact modeling of SOI substrates with buried ground plane (GPSOI) for substrate noise suppression" @default.
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- W2102323651 doi "https://doi.org/10.1109/mwsym.2001.967274" @default.
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