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• W2102582431 abstract "We have developed a repeatable process of forming uniform, small-size and high-density self- assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at 620 o C for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of 5× 10 11 /cm 2 . More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above- mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride- oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ∆ VGS ≈ 1.7 V, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demon- strated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate program -ming voltage, hole tunneling component from invers- ion layer is dominant. However, valence band elect-ron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time." @default.
• W2102582431 created "2016-06-24" @default.
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• W2102582431 date "2001-03-01" @default.
• W2102582431 modified "2023-09-26" @default.
• W2102582431 title "Characteristics of Si Nano-Crystal Memory" @default.
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