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- W2102829206 abstract "Traditional thinking assumes that a light effective mass (m*), high mobility material will result in better transistor characteristics. However, sub-12-nm metal-oxide-semiconductor field effect transistors (MOSFETs) with light m* may underperform compared to standard Si, as a result of source to drain (S/D) tunneling. An optimum heavier mass can decrease tunneling leakage current, and at the same time, improve gate to channel capacitance because of an increased quantum capacitance (Cq). A single band effective mass model has been used to provide the performance trends independent of material, orientation and strain. This paper provides guidelines for achieving optimum m* for sub-12-nm nanowire down to channel length of 3 nm. Optimum m* are found to range between 0.2-1.0 m <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0</sub> and more interestingly, these masses can be engineered within Si for both p-type and n-type MOSFETs. m* is no longer a material constant, but a geometry and strain dependent property of the channel material." @default.
- W2102829206 created "2016-06-24" @default.
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- W2102829206 date "2015-03-01" @default.
- W2102829206 modified "2023-09-26" @default.
- W2102829206 title "Design Guidelines for Sub-12 nm Nanowire MOSFETs" @default.
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- W2102829206 doi "https://doi.org/10.1109/tnano.2015.2395441" @default.
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