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- W2103018309 abstract "Metal as floating gate (FG) in combination with high-k interpoly dielectrics (IPD) is seen as a possible solution to continue the scaling of NAND Flash technology node beyond 25nm. We have investigated the thermal stability of TaN metal as FG in combination with Hf based high-k IPD stacks. IPD leakage is found to worsen with high temperature anneal and causing degraded memory behavior. Comparative leakage study of high-k dielectrics on metal and Si substrates were performed through metal-insulator-metal (MIM) and metal-insulator semiconductor (MIS) structures. The leakage degradation was observed to be higher in case of MIM, which was attributed to the higher degree of dielectric crystallization on metal. The thermal stability of the high-k IPD on TaN metal FG memory structure has to be improved for potential application in future NAND flash memory." @default.
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- W2103018309 date "2011-05-01" @default.
- W2103018309 modified "2023-09-27" @default.
- W2103018309 title "Investigation of Thermal Stability of High-kappa Interpoly Dielectrics in TaN Metal Floating Gate Memory Structures" @default.
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- W2103018309 doi "https://doi.org/10.1109/imw.2011.5873183" @default.
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