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- W2103067995 abstract "New constant drain-current deep level optical/transient spectroscopy (CI <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> -DLTS/DLOS) methods to quantify trap energies and concentrations in AlGaN/GaN high electron mobility transistors (HEMTs) are described. These methods are applied to RF stressed HEMTs to characterize the impact of stressing on traps and identified a significant increase in virtual gate related levels." @default.
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- W2103067995 date "2010-12-01" @default.
- W2103067995 modified "2023-10-09" @default.
- W2103067995 title "Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs" @default.
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- W2103067995 doi "https://doi.org/10.1109/iedm.2010.5703396" @default.
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