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- W2103159475 abstract "Various active regions in a silicon-on-insulator (SOI) structure, prepared by seeded lateral-epitaxy using a scanned cw-Ar laser, are characterized by fabricating MOSFETs and diodes. The MOSFETs on both sides of the SOI layer exhibit a channel mobility of higher than 600cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V.s. The p-n diodes in the seeding area show a forward current with an ideality factor of 1.2-1.4 and a reverse current level of 6x 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-8</sup> A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> at 0.1V. A novel device structure is also presented where the diode forward current is controlled by a MOS gate." @default.
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- W2103159475 date "1982-01-01" @default.
- W2103159475 modified "2023-09-27" @default.
- W2103159475 title "Characterization of laser-SOI double Si active layers by fabricating elementary device structures" @default.
- W2103159475 doi "https://doi.org/10.1109/iedm.1982.190317" @default.
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