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• W2103160775 startingPage "1501" @default.
• W2103160775 abstract "In this paper, nanoscale germanium (Ge) oxynitride dielectrics are investigated for Ge MOS device applications. The synthesizing methodology and physical properties of these oxynitride films have been examined first. Basic electrical characteristics have been acquired on metal-gated MOS capacitors with Ge oxynitride dielectric on substrates with different dopant types and crystal orientations. Using an optimized oxidation and nitridation recipe, high-quality Ge MOS capacitors with a minimal frequency dispersion and capacitance-voltage hysteresis have been demonstrated. In addition, the Ge oxynitride dielectric-substrate interface has also been analyzed with the combined low-frequency-high-frequency capacitance method that revealed a substantial reduction of interface trap density after the forming gas anneal. An asymmetric interface trap density distribution within the Ge bandgap has been mapped out, which might explain the inferior n-channel Ge MOSFETs with oxynitride dielectric. An abnormality in the general gate leakage behavior has been observed and found to originate from a transient charge-trapping effect." @default.
• W2103160775 created "2016-06-24" @default.
• W2103160775 creator A5065754731 @default.
• W2103160775 creator A5071603212 @default.
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• W2103160775 date "2006-07-01" @default.
• W2103160775 modified "2023-09-29" @default.
• W2103160775 title "Nanoscale germanium MOS Dielectrics-part I: germanium oxynitrides" @default.
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• W2103160775 doi "https://doi.org/10.1109/ted.2006.875808" @default.
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