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- W2103166850 abstract "The phenomenon of minority-carrier exclusion in n+−n and p+−p contact structures in narrow direct gap semiconductors is examined numerically and the results compared with those of analytical calculations. Degeneracy, Auger generation and electron diffusion, all play important roles in the n-type structures. For the case of CdHgTe, the electron concentration in the p-type structures remains high enough to continue to carry a significant proportion of the bias current, limiting the otherwise excessively high electric field. The criterion which establishes the range of validity of analytic expressions provides a means of estimating the threshold bias current density and length of excluded material from which the properties of excluded narrow-gap photodetectors can be predicted." @default.
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- W2103166850 title "The characteristics of minority-carrier exclusion in narrow direct gap semiconductors" @default.
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- W2103166850 doi "https://doi.org/10.1016/0020-0891(85)90040-5" @default.
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