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- W2103167213 abstract "Low-voltage operating pentacene-based organic field-effect transistors (OFETs) with a HfON gate insulator have been fabricated with a fully room-temperature process. Despite its thin capacitance equivalent thickness of 3.3 nm, the room-temperature-processed HfON gate insulator shows a low leakage current density of 7 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-7</sup> A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> at a gate voltage of -2 V. Moreover, the fully room-temperature-fabricated OFET (channel <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>W</i> / <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>L</i> = 1650/100 μm) shows a low subthreshold swing of 0.12 V/decade, a large on/off-current ratio of 6.8 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> , a threshold voltage of -0.5 V, and a hole mobility of 0.25 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V·s at an operating voltage of -2 V." @default.
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- W2103167213 date "2011-11-01" @default.
- W2103167213 modified "2023-09-25" @default.
- W2103167213 title "Fully Room-Temperature-Fabricated Low-Voltage Operating Pentacene-Based Organic Field-Effect Transistors With HfON Gate Insulator" @default.
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- W2103167213 doi "https://doi.org/10.1109/led.2011.2164776" @default.
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