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- W2103173770 abstract "The electron energy relaxation in semiconductors and insulators after high-level external excitation is analysed by a semi-classical approach based on a kinetic equation of the Boltzmann type. We show that the non-equilibrium distributions of electrons and holes have a customary Fermi-like shape with some effective temperature but also possess a high-energy non-Fermian 'tail'. The latter may extend deep into the conduction and valence bands while the Fermi-like component is localized within a small energy range just above the edge of the band gap. The effective temperature, effective chemical potential, and the shape of the high-energy component are governed by the process of electron-phonon interactions as well as by the rates of carrier generation and inter-band radiative recombination." @default.
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- W2103173770 date "2014-12-22" @default.
- W2103173770 modified "2023-09-28" @default.
- W2103173770 title "Relaxation of highly excited carriers in wide-gap semiconductors" @default.
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- W2103173770 doi "https://doi.org/10.1088/0953-8984/27/2/025801" @default.
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