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• W2103181260 abstract "ZnO thin films were grown by the pulsed laser deposition technique on c-plane sapphire substrates at a substrate temperature of 500^oC with 1x10^-^4Torr ambient gas. After the deposition process, ZnO thin films were annealed at 1000^oC for 5min under N2 or O2 ambient gas, respectively. In the X-ray patterns, the (002) peak of the annealed sample was shifted from that of the as-grown sample, which indicates a reduced lattice constant of about 1%. Even though the X-ray diffraction patterns in the samples annealed under O2 and N2 annealing gases were almost the same, photoluminescence spectra showed the generation of a shallow level with a few meV, and deep-level states were generated at Ev+0.594eV. In addition, a defect state appeared at Ec-0.607eV, which originated from hydrogen plasma irradiation on the ZnO sample." @default.
• W2103181260 created "2016-06-24" @default.
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• W2103181260 date "2009-02-01" @default.
• W2103181260 modified "2023-09-25" @default.
• W2103181260 title "Studies of defect states of ZnO thin films under different annealing conditions" @default.
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• W2103181260 doi "https://doi.org/10.1016/j.mejo.2008.07.049" @default.
• W2103181260 hasPublicationYear "2009" @default.
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