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• W2103217035 abstract "High-frequency capacitance-voltage (C-V) measurements have been made on ultrathin oxide metal-oxide-semiconductor (MOS) capacitors. The sensitivity of extracted oxide thickness to series resistance and gate leakage is demonstrated. Guidelines are outlined for reliable and accurate estimation of oxide thickness from C-V measurements for oxides down to 1.4 nm." @default.
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• W2103217035 date "1999-04-01" @default.
• W2103217035 modified "2023-10-16" @default.
• W2103217035 title "Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors" @default.
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• W2103217035 doi "https://doi.org/10.1109/55.753759" @default.
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