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• W2103248319 abstract "We report reproducible and controllable bipolar resistive memory devices based on Al/poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)/Al, which show an on/off current ratio as large as 104, reproducibility of more than 103 dc sweeping cycles, and retention time of 104 s. The switching mechanism is confirmed to be the filamentary switching. We show that the compliant current can effectively control the formation of filaments and the performance of the device, including the on-state resistance, the reset current, and the switching-off threshold voltage. In addition, the lowest reset power and the critical compliant current for resistive switching are determined." @default.
• W2103248319 created "2016-06-24" @default.
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• W2103248319 date "2010-12-20" @default.
• W2103248319 modified "2023-09-23" @default.
• W2103248319 title "Reproducible and controllable organic resistive memory based on Al/poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)/Al structure" @default.
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• W2103248319 doi "https://doi.org/10.1063/1.3529455" @default.
• W2103248319 hasPublicationYear "2010" @default.
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