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- W2103262055 abstract "We propose an advanced sub-quarter micron CMOS process for ultra shallow junctions and high reliability using a new nitrogen implantation technique. Nitrogen atoms implanted into the source/drain for NMOSFETs and PMOSFETs can suppress impurity diffusion and leakage current, since not only can nitrogen atoms occupy the diffusion path of arsenic and boron atoms but also the secondary defects induced by nitrogen implantation can act as a surface proximity gettering site. Moreover, this technique can remarkably suppress the hot carrier degradation for CMOS LDD FETs, since the segregation of nitrogen at interface between the substrate and the side-wall SiO/sub 2/ can reduce the interface state generation under the side-wall spacer." @default.
- W2103262055 created "2016-06-24" @default.
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- W2103262055 date "2002-11-19" @default.
- W2103262055 modified "2023-09-23" @default.
- W2103262055 title "Impact of surface proximity gettering and nitrided oxide side-wall spacer by nitrogen implantation on sub-quarter micron CMOS LDD FETs" @default.
- W2103262055 cites W1972373763 @default.
- W2103262055 doi "https://doi.org/10.1109/iedm.1995.499352" @default.
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