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- W2103299587 abstract "A Si-based waveguide photodetector with a response in the 1.3-1.55-μm wavelength range is demonstrated. The active absorption layer of the pin photodiode consists of a SiGeC alloy epitaxially grown on a Si substrate with a Ge content of 55% and a thickness of 800 /spl Aring/. The external quantum efficiency for a 400-μm-long waveguide, measured by using a single-mode fiber coupled to the waveguide facet, is 0.2% at 1.55 μm. The dark current density at peak photoresponse is 40 pA/μm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> . The quantum efficiency can be further enhanced by using multiple SiGeC layers as the absorber. Direct measurements of the absorption coefficient for the alloy layer are also reported." @default.
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- W2103299587 date "1997-02-01" @default.
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- W2103299587 title "Epitaxial SiGeC waveguide photodetector grown on Si substrate with response in the 1.3-1.55-μm wavelength range" @default.
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- W2103299587 doi "https://doi.org/10.1109/68.553101" @default.
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