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• W2103440156 abstract "The transport properties of holes in Si, Ge, and Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> Ge under high compressive stresses are studied with a Monte Carlo simulation method. Stress significantly improves the low-energy mass and mobility, while its effect is diminished in the high-energy bandstructure. The transient behavior of the carrier velocity exhibits a double-overshoot peak at high driving field. This double-overshoot behavior is manifested in carrier-velocity profiles in simulated short-channel PMOS devices. In steady state at lower field, the hole velocity exceeds the saturation velocity at high field. This leads to a negative differential resistance effect in simulated resistors. We propose to use this effect, generic to cubic semiconductors, for transferred-hole devices. An advantage of this approach is that it can be integrated into the conventional stress-engineered Si or Ge logic process." @default.
• W2103440156 created "2016-06-24" @default.
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• W2103440156 date "2010-08-01" @default.
• W2103440156 modified "2023-09-23" @default.
• W2103440156 title "Compressive Uniaxial Stress Bandstructure Engineering for Transferred-Hole Devices" @default.
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• W2103440156 doi "https://doi.org/10.1109/led.2010.2050053" @default.
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