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• W2103444413 abstract "Titanium tetraisopropoxide (TTIP) is a precursor utilized in atomic layer depositions (ALDs) for the growth of TiO2. The chemistry of TTIP deposition onto a slightly oxidized molybdenum substrate was explored under ultrahigh vacuum (UHV) conditions with X-ray photoelectron spectroscopy. Comparison of the Ti(2p) and C(1s) peak areas has been used to determine the surface chemistry for increasing substrate temperatures. TTIP at a gas-phase temperature of 373 K reacts with a MoOx substrate at 373 K but not when the substrate is at 295 K, consistent with a reaction that proceeds via a Langmuir–Hinshelwood mechanism. Chemical vapor deposition was observed for depositions at 473 K, below the thermal decomposition temperature of TTIP and within the ALD temperature window, suggesting an alternative reaction pathway competitive to ALD. We propose that under conditions of low pressure and moderate substrate temperatures dehydration of the reacted precursor by nascent TiO2 becomes the dominant reaction pathway and leads to the CVD growth of TiO2 rather than a self-limiting ALD reaction. These results highlight the complexity of the chemistry of ALD precursors and demonstrate that changing the pressure can drastically alter the surface chemistry." @default.
• W2103444413 created "2016-06-24" @default.
• W2103444413 creator A5013834441 @default.
• W2103444413 creator A5072406424 @default.
• W2103444413 date "2014-10-23" @default.
• W2103444413 modified "2023-10-17" @default.
• W2103444413 title "Alternative Low-Pressure Surface Chemistry of Titanium Tetraisopropoxide on Oxidized Molybdenum" @default.
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• W2103444413 doi "https://doi.org/10.1021/jp505653u" @default.
• W2103444413 hasPublicationYear "2014" @default.
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