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• W2103655887 abstract "BaRuO3 (BRO) thin films were prepared by laser ablation at substrate temperature (Tsub) ranging from room temperature to 973 K in a high vacuum (10−6 Pa) and in O2 at oxygen pressures (PO2) of 0.13 to 130 Pa. The relationship between deposition conditions, microstructure, binding state and electrical conductivity was investigated. 9R-type BRO thin film with well-crystallized fine grains was obtained at PO2=13 Pa and Tsub>773 K. BaRu6O12 was co-deposited with BRO at P=10−6 Pa and Tsub>573 K. The electrical conductivity (σ) of the BRO thin films positively correlated with Tsub and PO2. Highly conductive (σ>104 S·m−1) BRO thin films showed metallic conduction whereas less conductive (σ<104 S·m−1) BRO thin films showed semiconducting behavior. BRO thin film prepared at PO2=13 Pa and Tsub=773 K exhibited a maximum σ of 7.7×104 S·m−1 at room temperature." @default.
• W2103655887 created "2016-06-24" @default.
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• W2103655887 date "2007-01-01" @default.
• W2103655887 modified "2023-09-24" @default.
• W2103655887 title "Microstructure and Electrical Conductivity of BaRuO<SUB>3</SUB> Thin Films Prepared by Laser Ablation" @default.
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• W2103655887 doi "https://doi.org/10.2320/matertrans.mra2007117" @default.
• W2103655887 hasPublicationYear "2007" @default.
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