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- W2103707003 abstract "TANOS charge trap flash (CTF) with Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> -SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> memory stack and TaN metal gate is a candidate technology to replace conventional floating gate technology for multi-level NAND applications beyond the 32nm node. The main drawbacks of TANOS to date are poor erase performance (in terms of speed and/or saturated level) as well as insufficient retention in the highest programmed state." @default.
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- W2103707003 date "2008-01-01" @default.
- W2103707003 modified "2023-10-04" @default.
- W2103707003 title "Nitride Engineering for Improved Erase Performance and Retention of TANOS NAND Flash Memory" @default.
- W2103707003 doi "https://doi.org/10.1109/nvsmw.2008.45" @default.
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