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- W2103809692 abstract "Together with 1,3 -1,5 ?m optoelectronics, a microelectronic technology is presently developing on InP-based materials, owing to their remarkable transport properties. After general considerations on InP and GaInAs properties, various transistor structures are presented and their comparative merits discussed. This is followed by an analysis of current trends in technology and fields of applications." @default.
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- W2103809692 title "TRENDS IN INDIUM PHOSPHIDE MICROELECTRONICS" @default.
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- W2103809692 doi "https://doi.org/10.1051/jphyscol:1988424" @default.
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