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• W2104067524 abstract "In this study, n-type porous silicon (n-PS) films with high-aspect-ratio Si-tips are formed with the assistance of Hall-effect during the electrochemical anodization. Lorentz force sweeps down the majority carriers (electrons) in n-type Si to enhance the anodization etching. Surface layers are inverted from n-type to p-type, so sufficient holes can continuously appear on the surface to participate in chemical reaction during the etching process. Illumination is not necessary in this process, so the problem of illumination-depth limitation is solved. The etching current, morphology, and photoluminescence of the n-PS prepared in this way are investigated. Strong visible photoluminescence emissions at room temperature are demonstrated on n-PS." @default.
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• W2104067524 date "2007-03-01" @default.
• W2104067524 modified "2023-09-26" @default.
• W2104067524 title "The enhancement of photoluminescence of n-type porous silicon by Hall-effect assistance during electrochemical anodization" @default.
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• W2104067524 doi "https://doi.org/10.1016/j.elecom.2006.10.001" @default.
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