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• W2104150077 abstract "The simulation study of the ONO gate stack scaling, which includes the Monte-Carlo statistical analysis of time-dependent Vth distribution and SILC is performed. Leakage through both tunneling and blocking oxide is taken into account including multi-trap tunneling paths. Exact 50 nm floating-gate cell structure is used instead of simple 1D stack for modeling and comparison with experimental data. Analysis of the influence of trap parameters on scaling trends is given." @default.
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• W2104150077 date "2009-04-01" @default.
• W2104150077 modified "2023-10-04" @default.
• W2104150077 title "Statistical retention modeling in floating-gate cell: ONO scaling" @default.
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• W2104150077 doi "https://doi.org/10.1109/irps.2009.5173372" @default.
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