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- W21043273 abstract "High-efficiency, 4-cm/sup 2/ GaAs solar cells have been fabricated by metalorganic chemical vapor deposition (MOCVD). Efficiencies as high as 18.7% for p-n and 18.4% for n-p structures have been measured. The use of MOCVD allows the deposition of extremely well-defined layers and its flexibility can accommodate both p-n and n-p junctions. Prior to any growths, computer simulations were carried out to optimize cell performance. The computer model has been constantly updated with measured values of mobilities, minority carrier diffusion lengths, and absorption constants which are then used to solve the transport equations and optimize efficiency. The model predicts optimum layer thicknesses, doping levels, grid pattern and AR coating. Both p-n and n-p GaAs cells were grown on n- and p-type substrates, respectively. All cell configurations include an AlGaAs (90% Al) window to reduce surface recombination in the topmost active layer. A highlydoped contact layer is finally grown on top of the window layer to enable formation of good ohmic contacts and provide protection of the cell during processing. The contact layer is selectively etched away after metallization, and the briefly exposed window layer is covered with a single-layer Si/sub 3/N/sub 4/ AR coating. A standard grid configuration for 2-cm xmore » 2-cm Si space cells was used and the cell metallization was plated up to 3-..mu.. thickness.« less" @default.
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- W21043273 date "1984-05-01" @default.
- W21043273 modified "2023-09-24" @default.
- W21043273 title "High-efficiency, large-area GaAs solar cells" @default.
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