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• W2104359201 abstract "Self-assembled monolayers (SAMs) of (3Mercaptopropyl)trimethoxysiloxane (MPTMS) were grown on Si (100) wafers covered either with lowtemperature silicon oxide (LTO) or with SiLK. The SAM was applied on LTO and SiLK, as described by Dressick and co-workers [1]. Cu films were subsequently chemically vapor deposited (CVD) on the SAMs with a novel reactor presented previously [2] equipped with a tungsten hot-wire enabling the separate heating of the gas phase (hot-wire CVD, HWCVD). Hence, Cu films can be deposited into the same reactor by conventional thermal and hot-wire assisted CVD. As shown before [3], copper films may be deposited easily on insulating films by HWCVD. CupraSelect vapors, which is the commercial name of hexafluoroacetylacetonate Cu(I) trimethylvinylsilane, directly-liquid injected into the system using ultra-pure N2 as carrier gas. In Fig. 1 atomic force microscopy (AFM) images taken on LTO and SiLK covered Si substrates after deposition of the MPTMS SAMs are shown. MPTMS clusters of molecules are formed with a mean height of 7 nm and 10 nm on the LTO and on the SiLK surfaces respectively. As we observe from Fig. 1 the nature of the substrate plays important role for the formation of MPTMS clusters. In Fig. 2 AFM images taken on Si substrates prepared as in Fig. 1 and after 3 min of thermally stimulated CVD of Cu at 220 C are shown. It can be observed that the molecular clusters are now higher and wider (for LTO-MPTMS the mean height is now 49 nm while for the SiLK-MPTMS 55 nm). The study of AFM images shows that higher and more numerous clusters are formed on SiLK than that of LTO. The number of the initially formed molecular clusters is expected to influence the morphology of the Cu film finally obtained. In Fig. 3 AFM images taken on Si substrates prepared as in Fig. 1 (covered with LTO and SiLK on which MPTMS SAMs have been deposited) and after 3 min of HWCVD Cu deposition at 220 C are shown. The mean height of clusters is greater on SiLK substrates (129 nm) than that of LTO (93 nm) and, moreover, the deposition is now faster than that of thermally Cu CVD. This is due to the separate heating of the gas phase which enhances the growth rate by a factor dependent on the filament temperature [4]. The decomposition of precursor in the gas phase near the hot-filament produces species that impinge on the substrate surfaces and contribute to the deposition [4]. In Fig. 4 scanning electron microscope (SEM) images taken on the surface of samples covered with SiLK layer and MPTMS SAMs for 3 min of thermal and HWCVD Cu at 220 C are shown. It can be observed that the HWCVD sample is denser than the thermal one. This is probably due to the faster growth rate of hot-wire assisted relatively to thermal CVD. Summarizing results and conclusions: the nature of the substrate plays important role for the formation of MPTMS clusters. The application of SAMs on dielectrics enhances further adhesion and morphology. The use of HWCVD enables the deposition on the various dielectrics used in Si technology and increases the deposition rate compared to the conventional thermal method." @default.
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• W2104359201 date "2019-12-17" @default.
• W2104359201 modified "2023-09-24" @default.
• W2104359201 title "Initial Stages of Thermally and Hot-Wire Assisted CVD Copper on SiLK® and LTO Substrates Activated with Mercaptopropyl Triethoxysilane Self-Assembled Monolayers" @default.
• W2104359201 doi "https://doi.org/10.1149/1.3207683" @default.
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