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• W2104396403 endingPage "114" @default.
• W2104396403 startingPage "106" @default.
• W2104396403 abstract "In this paper, we compare the capacitance-voltage and current-voltage characteristics of gate stacks calculated with different simulation models developed by seven different research groups, including open and closed boundaries approaches to solve the Schroumldinger equation inside the stack. The comparison has been carried out on template device structures, including pure SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> dielectrics and high-kappa stacks, forcing the use of the same physical parameters in all models. Although the models are based on different modeling assumptions, the discrepancies among results in terms of capacitance and leakage current are small. These discrepancies have been carefully investigated by analyzing the individual modeling parameters and the internal quantities (e.g., tunneling probabilities and subband energies) contributing to current and capacitance" @default.
• W2104396403 created "2016-06-24" @default.
• W2104396403 creator A5001105004 @default.
• W2104396403 creator A5005242916 @default.
• W2104396403 creator A5008355061 @default.
• W2104396403 creator A5021976967 @default.
• W2104396403 creator A5024578577 @default.
• W2104396403 creator A5026326516 @default.
• W2104396403 creator A5033037232 @default.
• W2104396403 creator A5040318538 @default.
• W2104396403 creator A5041741378 @default.
• W2104396403 creator A5044789579 @default.
• W2104396403 creator A5048145028 @default.
• W2104396403 creator A5051946676 @default.
• W2104396403 creator A5056969800 @default.
• W2104396403 creator A5058179672 @default.
• W2104396403 creator A5060010055 @default.
• W2104396403 creator A5061426001 @default.
• W2104396403 creator A5063049108 @default.
• W2104396403 creator A5067942277 @default.
• W2104396403 creator A5069852988 @default.
• W2104396403 creator A5074619423 @default.
• W2104396403 creator A5076267890 @default.
• W2104396403 creator A5082406063 @default.
• W2104396403 date "2007-01-01" @default.
• W2104396403 modified "2023-09-25" @default.
• W2104396403 title "Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks" @default.
• W2104396403 cites W1578525731 @default.
• W2104396403 cites W1968758278 @default.
• W2104396403 cites W1969336723 @default.
• W2104396403 cites W1971205603 @default.
• W2104396403 cites W1975256946 @default.
• W2104396403 cites W1980584607 @default.
• W2104396403 cites W1983116185 @default.
• W2104396403 cites W1985854442 @default.
• W2104396403 cites W2005977844 @default.
• W2104396403 cites W2011689795 @default.
• W2104396403 cites W2016313984 @default.
• W2104396403 cites W2020230041 @default.
• W2104396403 cites W2024944326 @default.
• W2104396403 cites W2031048208 @default.
• W2104396403 cites W2044435263 @default.
• W2104396403 cites W2087068143 @default.
• W2104396403 cites W2089257704 @default.
• W2104396403 cites W2093448028 @default.
• W2104396403 cites W2095928799 @default.
• W2104396403 cites W2096873013 @default.
• W2104396403 cites W2106469926 @default.
• W2104396403 cites W2115864302 @default.
• W2104396403 cites W2118173104 @default.
• W2104396403 cites W2122413127 @default.
• W2104396403 cites W2128100740 @default.
• W2104396403 cites W2128574591 @default.
• W2104396403 cites W2141263414 @default.
• W2104396403 cites W2142531470 @default.
• W2104396403 cites W2145633302 @default.
• W2104396403 cites W2148338651 @default.
• W2104396403 cites W2149666202 @default.
• W2104396403 cites W2151947633 @default.
• W2104396403 cites W2167228301 @default.
• W2104396403 cites W2171861304 @default.
• W2104396403 cites W2538736410 @default.
• W2104396403 doi "https://doi.org/10.1109/ted.2006.887226" @default.
• W2104396403 hasPublicationYear "2007" @default.
• W2104396403 type Work @default.
• W2104396403 sameAs 2104396403 @default.
• W2104396403 citedByCount "28" @default.
• W2104396403 countsByYear W21043964032013 @default.
• W2104396403 countsByYear W21043964032017 @default.
• W2104396403 countsByYear W21043964032020 @default.
• W2104396403 countsByYear W21043964032022 @default.
• W2104396403 crossrefType "journal-article" @default.
• W2104396403 hasAuthorship W2104396403A5001105004 @default.
• W2104396403 hasAuthorship W2104396403A5005242916 @default.
• W2104396403 hasAuthorship W2104396403A5008355061 @default.
• W2104396403 hasAuthorship W2104396403A5021976967 @default.
• W2104396403 hasAuthorship W2104396403A5024578577 @default.
• W2104396403 hasAuthorship W2104396403A5026326516 @default.
• W2104396403 hasAuthorship W2104396403A5033037232 @default.
• W2104396403 hasAuthorship W2104396403A5040318538 @default.
• W2104396403 hasAuthorship W2104396403A5041741378 @default.
• W2104396403 hasAuthorship W2104396403A5044789579 @default.
• W2104396403 hasAuthorship W2104396403A5048145028 @default.
• W2104396403 hasAuthorship W2104396403A5051946676 @default.
• W2104396403 hasAuthorship W2104396403A5056969800 @default.
• W2104396403 hasAuthorship W2104396403A5058179672 @default.
• W2104396403 hasAuthorship W2104396403A5060010055 @default.
• W2104396403 hasAuthorship W2104396403A5061426001 @default.
• W2104396403 hasAuthorship W2104396403A5063049108 @default.
• W2104396403 hasAuthorship W2104396403A5067942277 @default.
• W2104396403 hasAuthorship W2104396403A5069852988 @default.
• W2104396403 hasAuthorship W2104396403A5074619423 @default.
• W2104396403 hasAuthorship W2104396403A5076267890 @default.
• W2104396403 hasAuthorship W2104396403A5082406063 @default.
• W2104396403 hasConcept C119599485 @default.
• W2104396403 hasConcept C120398109 @default.
• W2104396403 hasConcept C121332964 @default.
• W2104396403 hasConcept C127413603 @default.

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