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• W2104544977 endingPage "914" @default.
• W2104544977 startingPage "907" @default.
• W2104544977 abstract "The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For the FETs, both single- and dual-gate devices are fabricated. The Si substrate is employed as the back gate in both the single- and dual-gate devices, while a top metal gate is employed as a second gate in the dual-gate devices. This top gate is made either as a global gate or as a local finger gate by using a thin HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> layer grown by atomic layer deposition as a gate dielectric. The measurements reveal that the fabricated devices show the desired transistor characteristics. The measurements also demonstrate the possibility of realizing ambipolar transistors using InSb nanowires. For InSb nanowire quantum dots, both contact-induced Schottky-barrier-defined devices and top-finger-gate-defined devices are fabricated, and the Si substrate is used as a gate to tune the electron number in the quantum dots. The electrical measurements of these fabricated quantum-dot devices show the Coulomb-blockade effect at 4.2 K. A Fabry-Perot-like interference effect is also observed in a Schottky-barrier-defined quantum device. The authors also discuss in a comparative way, the results of measurements for the InSb nanowire devices made by different fabrication technologies employed in this study." @default.
• W2104544977 created "2016-06-24" @default.
• W2104544977 creator A5007984578 @default.
• W2104544977 creator A5014442955 @default.
• W2104544977 creator A5015281781 @default.
• W2104544977 creator A5029795060 @default.
• W2104544977 creator A5073248302 @default.
• W2104544977 creator A5074148793 @default.
• W2104544977 creator A5076004148 @default.
• W2104544977 date "2011-07-01" @default.
• W2104544977 modified "2023-09-27" @default.
• W2104544977 title "InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices" @default.
• W2104544977 cites W1625611598 @default.
• W2104544977 cites W1678777510 @default.
• W2104544977 cites W1680125141 @default.
• W2104544977 cites W1826198579 @default.
• W2104544977 cites W1963493655 @default.
• W2104544977 cites W1966216662 @default.
• W2104544977 cites W1974322887 @default.
• W2104544977 cites W1985054360 @default.
• W2104544977 cites W1988549895 @default.
• W2104544977 cites W2006271366 @default.
• W2104544977 cites W2014638979 @default.
• W2104544977 cites W2032165989 @default.
• W2104544977 cites W2032597592 @default.
• W2104544977 cites W2034174673 @default.
• W2104544977 cites W2036214258 @default.
• W2104544977 cites W2038305545 @default.
• W2104544977 cites W2039347222 @default.
• W2104544977 cites W2039796122 @default.
• W2104544977 cites W2040153108 @default.
• W2104544977 cites W2040868986 @default.
• W2104544977 cites W2041083659 @default.
• W2104544977 cites W2052053118 @default.
• W2104544977 cites W2056046179 @default.
• W2104544977 cites W2057863636 @default.
• W2104544977 cites W2071283351 @default.
• W2104544977 cites W2071465434 @default.
• W2104544977 cites W2075150721 @default.
• W2104544977 cites W2085762597 @default.
• W2104544977 cites W2092333682 @default.
• W2104544977 cites W2113408006 @default.
• W2104544977 cites W2114269370 @default.
• W2104544977 cites W2122302685 @default.
• W2104544977 cites W2132453906 @default.
• W2104544977 cites W2141753454 @default.
• W2104544977 cites W2142353285 @default.
• W2104544977 cites W2144805203 @default.
• W2104544977 cites W2151402199 @default.
• W2104544977 cites W2151840033 @default.
• W2104544977 cites W2326250118 @default.
• W2104544977 cites W3098200426 @default.
• W2104544977 cites W3102657059 @default.
• W2104544977 doi "https://doi.org/10.1109/jstqe.2010.2090135" @default.
• W2104544977 hasPublicationYear "2011" @default.
• W2104544977 type Work @default.
• W2104544977 sameAs 2104544977 @default.
• W2104544977 citedByCount "33" @default.
• W2104544977 countsByYear W21045449772012 @default.
• W2104544977 countsByYear W21045449772013 @default.
• W2104544977 countsByYear W21045449772014 @default.
• W2104544977 countsByYear W21045449772015 @default.
• W2104544977 countsByYear W21045449772016 @default.
• W2104544977 countsByYear W21045449772017 @default.
• W2104544977 countsByYear W21045449772019 @default.
• W2104544977 countsByYear W21045449772020 @default.
• W2104544977 countsByYear W21045449772021 @default.
• W2104544977 countsByYear W21045449772022 @default.
• W2104544977 countsByYear W21045449772023 @default.
• W2104544977 crossrefType "journal-article" @default.
• W2104544977 hasAuthorship W2104544977A5007984578 @default.
• W2104544977 hasAuthorship W2104544977A5014442955 @default.
• W2104544977 hasAuthorship W2104544977A5015281781 @default.
• W2104544977 hasAuthorship W2104544977A5029795060 @default.
• W2104544977 hasAuthorship W2104544977A5073248302 @default.
• W2104544977 hasAuthorship W2104544977A5074148793 @default.
• W2104544977 hasAuthorship W2104544977A5076004148 @default.
• W2104544977 hasConcept C111368507 @default.
• W2104544977 hasConcept C119599485 @default.
• W2104544977 hasConcept C121332964 @default.
• W2104544977 hasConcept C124657808 @default.
• W2104544977 hasConcept C127313418 @default.
• W2104544977 hasConcept C127413603 @default.
• W2104544977 hasConcept C145598152 @default.
• W2104544977 hasConcept C147120987 @default.
• W2104544977 hasConcept C16115445 @default.
• W2104544977 hasConcept C165801399 @default.
• W2104544977 hasConcept C166972891 @default.
• W2104544977 hasConcept C171250308 @default.
• W2104544977 hasConcept C172385210 @default.
• W2104544977 hasConcept C192562407 @default.
• W2104544977 hasConcept C25621703 @default.
• W2104544977 hasConcept C2777289219 @default.
• W2104544977 hasConcept C49040817 @default.
• W2104544977 hasConcept C62520636 @default.
• W2104544977 hasConcept C74214498 @default.
• W2104544977 hasConcept C78434282 @default.
• W2104544977 hasConceptScore W2104544977C111368507 @default.

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