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W2104577697 abstract "We present a 45 nm LSTP platform featuring a low-leakage/low-cost transistor and full-NCS/dual damascene Cu interconnects. By applying MSA + spike-RTA to annealing process, Ion at Vd=1.2 V are 0.54 mA/um at Ioff=40 pA/mum for nMOS and 0.22mA/um at Ioff=20 pA/mum for pMOS. CV/I performance is fully competitive at Vdd=1.1 V. The RC delay of our fulPNCS with thinned BRM is 14% lower than that of the ITRS 2006 update. The full-NCS has an excellent tolerability to stress migration and a mechanical toughness for wire bonding." @default.
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W2104577697 date "2007-06-01" @default.
W2104577697 modified "2023-09-25" @default.
W2104577697 title "Dependable Integration of Full-Porous Low-k Interconnect and Low-leakage/ Low-cost Transistor for 45nm LSTP Platform" @default.
W2104577697 doi "https://doi.org/10.1109/vlsit.2007.4339681" @default.
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