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• W2104792231 abstract "Abstract A Sb-doped ZnO microrod array was fabricated on an Al-doped ZnO thin film by electrodeposition. Strong violet luminescence, originated from free electron-to-acceptor level transitions, was identified by temperature-dependent photoluminescence measurements. This acceptor-related transition was attributed to substitution of Sb dopants for Zn sites, instead of O sites, to form a complex with two Zn vacancies (V Zn ), the Sb Zn -2V Zn complex. This Sb Zn -2V Zn complex has a lower formation energy and acts as a shallow acceptor which can induce the observed strong violet luminescence. The photoresponsivity of our ZnO p-n homojunction device under a negative bias demonstrated a nearly 40-fold current gain, illustrating that our device is potentially an excellent candidate for photodetector applications in the ultraviolet wavelength region." @default.
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• W2104792231 date "2013-07-05" @default.
• W2104792231 modified "2023-10-18" @default.
• W2104792231 title "Room-temperature violet luminescence and ultraviolet photodetection of Sb-doped ZnO/Al-doped ZnO homojunction array" @default.
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• W2104792231 doi "https://doi.org/10.1186/1556-276x-8-313" @default.
• W2104792231 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/3711895" @default.
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