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- W2104856717 abstract "Bi 12 SiO 20 thin films have been prepared on glass and (0001) sapphire substrates by ECR plasma sputtering with a Bi and Si multitarget system. Polycrystalline thin films of δ-phase Bi 12 SiO 20 have been obtained without any substrate heating. These films can be transformed into γ-phase Bi 12 SiO 20 by heat treatment above 400°C in air and show a large photoconductivity in the range of 380-460 nm. Epitaxial thin films of γ-phase Bi 12 SiO 20 have been obtained on (0001) sapphire substrates at the substrate temperature of 600°C during the sputtering process. Excellent quadratic electrooptic effects for these epitaxial thin films are successfully observed for the first time, and a spatial light modulator using this γ-phase Bi 12 SiO 20 thin film has also been demonstrated. The details of the preparation, structure and some electrical and electrooptic properties of the Bi 12 SiO 20 thin films are described." @default.
- W2104856717 created "2016-06-24" @default.
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- W2104856717 date "1991-12-01" @default.
- W2104856717 modified "2023-09-24" @default.
- W2104856717 title "Bi<sub>12</sub>SiO<sub>20</sub> Thin Films Grown by Electron Cyclotron Resonance Plasma Sputtering with a Bi and Si Multitarget System" @default.
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- W2104856717 doi "https://doi.org/10.1143/jjap.30.3796" @default.
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