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• W2104876532 abstract "We report on the properties of GaNAsP/GaP lasers which offer a potential route to producing lasers monolithically on silicon. Lasing has been observed over a wide temperature range with pulsed threshold current density of 2.5 kA/cm2 at 80 K (λ=890 nm)⁠. Temperature dependence measurements show that the radiative component of the threshold is relatively temperature stable while the overall threshold current is temperature sensitive. A sublinear variation of spontaneous emission versus current coupled with a decrease in external quantum efficiency with increasing temperature and an increase in threshold current with hydrostatic pressure implies that a carrier leakage path is the dominant carrier recombination mechanism." @default.
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• W2104876532 date "2008-09-08" @default.
• W2104876532 modified "2023-09-26" @default.
• W2104876532 title "Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers" @default.
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• W2104876532 doi "https://doi.org/10.1063/1.2975845" @default.
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