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- W2105154018 abstract "Optimization of the n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-</sup> region concentration for n-channel MOSFET's with a lightly doped drain (LDD) structure was investigated, based on an analysis of the substrate current characteristics. When a substrate current tailing is observed, which is peculiar to the LDDFET with a low-concentration n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-</sup> region, a gate current is not observed, which suggests strong resistance against hot-carrier injection. This was confirmed by a bias stress test. The optimized surface concentration for the n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-</sup> region ranges from 1 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>18</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> to 2.5 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>18</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> under negligible V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</inf> shift and less than 25-percent driving capability degradation, compared to values for a conventional MOSFET." @default.
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- W2105154018 date "1985-02-01" @default.
- W2105154018 modified "2023-10-18" @default.
- W2105154018 title "An optimized and reliable LDD structure for 1-µm NMOSFET based on substrate current analysis" @default.
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- W2105154018 doi "https://doi.org/10.1109/t-ed.1985.21959" @default.
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