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• W2105196306 abstract "Growths of GaN on Si(111) – (7 × 7) substrates by plasma-assisted molecular-beam epitaxy (PA-MBE) have been studied. Optimal conditions of MBE and the effect of a low-temperature (LT) buffer are followed. It is found that irrespective of the growth conditions and the growth strategies (direct versus two-step growth), a thin amorphous-like interface layer always forms. For smooth surfaces and better crystallinity of the epifilms, a LT-buffer preceding the high-temperature deposition is helpful, and the grown GaN films are of nitrogen-polar. Transport measurements of the heterojunctions of GaN on heavily p- and n-doped Si reveal ohmic behavior, whereas that of n-GaN on lightly doped n−-Si substrate shows rectifying characteristics." @default.
• W2105196306 created "2016-06-24" @default.
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• W2105196306 date "2011-11-01" @default.
• W2105196306 modified "2023-10-18" @default.
• W2105196306 title "Growth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaN/Si heterojunctions" @default.
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• W2105196306 doi "https://doi.org/10.1063/1.3658850" @default.
• W2105196306 hasPublicationYear "2011" @default.
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