FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2105286593> ?p ?o ?g. }

• W2105286593 endingPage "1280" @default.
• W2105286593 startingPage "1275" @default.
• W2105286593 abstract "In this study, we demonstrate an <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>in</i> <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>situ</i> roughening technique at the GaN/sapphire interface in GaN-based LEDs using a silane treatment (SiH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> treatment) process that forms a thin SiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> layer with nanometer-sized holes on the sapphire surface that behave like a patterned sapphire substrate. A plurality of voids at the GaN/sapphire interface is observed according to the transmission electron microscopy analysis. With a 20 mA current injection, the results indicate that the typical output power of LEDs grown with and without the SiH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> treatment process are approximately 18.0 and 15.6 mW, respectively. In other words, the output power can be enhanced by 15% with the use of the SiH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> treatment process. The enhancement of output power is mainly due to light scattering at the naturally textured GaN/sapphire interface, which can lead to a higher escape probability for the photons emitted from the active layer in an LED." @default.
• W2105286593 created "2016-06-24" @default.
• W2105286593 creator A5013933696 @default.
• W2105286593 creator A5031029868 @default.
• W2105286593 creator A5039372275 @default.
• W2105286593 creator A5039469651 @default.
• W2105286593 creator A5047287790 @default.
• W2105286593 creator A5064309075 @default.
• W2105286593 creator A5077823956 @default.
• W2105286593 creator A5087277261 @default.
• W2105286593 date "2009-07-01" @default.
• W2105286593 modified "2023-10-18" @default.
• W2105286593 title "GaN-Based LEDs Output Power Improved by Textured GaN/Sapphire Interface Using <emphasis emphasistype=italic>In Situ</emphasis> <formula formulatype=inline><tex Notation=TeX>$hbox{SiH}_{bf 4}$</tex> </formula> Treatment Process During Epitaxial Growth" @default.
• W2105286593 cites W1970535728 @default.
• W2105286593 cites W1989241102 @default.
• W2105286593 cites W2003733754 @default.
• W2105286593 cites W2004959520 @default.
• W2105286593 cites W2007930532 @default.
• W2105286593 cites W2010828428 @default.
• W2105286593 cites W2021790800 @default.
• W2105286593 cites W2024006703 @default.
• W2105286593 cites W2036430993 @default.
• W2105286593 cites W2036767032 @default.
• W2105286593 cites W2050702517 @default.
• W2105286593 cites W2078371875 @default.
• W2105286593 cites W2081456112 @default.
• W2105286593 cites W2089677409 @default.
• W2105286593 cites W2096551349 @default.
• W2105286593 cites W2102719603 @default.
• W2105286593 cites W2108857977 @default.
• W2105286593 cites W2119441821 @default.
• W2105286593 cites W2161891403 @default.
• W2105286593 cites W2170021125 @default.
• W2105286593 cites W4298898028 @default.
• W2105286593 doi "https://doi.org/10.1109/jstqe.2009.2012505" @default.
• W2105286593 hasPublicationYear "2009" @default.
• W2105286593 type Work @default.
• W2105286593 sameAs 2105286593 @default.
• W2105286593 citedByCount "13" @default.
• W2105286593 countsByYear W21052865932012 @default.
• W2105286593 countsByYear W21052865932013 @default.
• W2105286593 countsByYear W21052865932015 @default.
• W2105286593 crossrefType "journal-article" @default.
• W2105286593 hasAuthorship W2105286593A5013933696 @default.
• W2105286593 hasAuthorship W2105286593A5031029868 @default.
• W2105286593 hasAuthorship W2105286593A5039372275 @default.
• W2105286593 hasAuthorship W2105286593A5039469651 @default.
• W2105286593 hasAuthorship W2105286593A5047287790 @default.
• W2105286593 hasAuthorship W2105286593A5064309075 @default.
• W2105286593 hasAuthorship W2105286593A5077823956 @default.
• W2105286593 hasAuthorship W2105286593A5087277261 @default.
• W2105286593 hasConcept C120665830 @default.
• W2105286593 hasConcept C121332964 @default.
• W2105286593 hasConcept C176666156 @default.
• W2105286593 hasConcept C192562407 @default.
• W2105286593 hasConcept C2780064504 @default.
• W2105286593 hasConcept C49040817 @default.
• W2105286593 hasConcept C520434653 @default.
• W2105286593 hasConceptScore W2105286593C120665830 @default.
• W2105286593 hasConceptScore W2105286593C121332964 @default.
• W2105286593 hasConceptScore W2105286593C176666156 @default.
• W2105286593 hasConceptScore W2105286593C192562407 @default.
• W2105286593 hasConceptScore W2105286593C2780064504 @default.
• W2105286593 hasConceptScore W2105286593C49040817 @default.
• W2105286593 hasConceptScore W2105286593C520434653 @default.
• W2105286593 hasIssue "4" @default.
• W2105286593 hasLocation W21052865931 @default.
• W2105286593 hasOpenAccess W2105286593 @default.
• W2105286593 hasPrimaryLocation W21052865931 @default.
• W2105286593 hasRelatedWork W1973287151 @default.
• W2105286593 hasRelatedWork W1977588093 @default.
• W2105286593 hasRelatedWork W2007882807 @default.
• W2105286593 hasRelatedWork W2016251026 @default.
• W2105286593 hasRelatedWork W2025697692 @default.
• W2105286593 hasRelatedWork W2052525405 @default.
• W2105286593 hasRelatedWork W2065334129 @default.
• W2105286593 hasRelatedWork W2111203923 @default.
• W2105286593 hasRelatedWork W2161891403 @default.
• W2105286593 hasRelatedWork W188251190 @default.
• W2105286593 hasVolume "15" @default.
• W2105286593 isParatext "false" @default.
• W2105286593 isRetracted "false" @default.
• W2105286593 magId "2105286593" @default.
• W2105286593 workType "article" @default.