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• W2105573592 abstract "We have investigated the growth of Ga-polarity (0001) and N-polarity (0001̄) Si-doped GaN on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. For a given Si effusion cell temperature and under similar growth conditions, the Hall carrier concentration was found to be consistently higher for samples with N polarity. Secondary ion mass spectrometry measurements show no significant difference for the incorporation of Si into GaN of either polarity. However, the incorporation of background impurities, C and O, was found to be higher for the (0001̄) GaN samples." @default.
• W2105573592 created "2016-06-24" @default.
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• W2105573592 date "2002-05-01" @default.
• W2105573592 modified "2023-10-14" @default.
• W2105573592 title "Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxy" @default.
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• W2105573592 doi "https://doi.org/10.1116/1.1463723" @default.
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