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- W2105763552 abstract "InGaN/GaN quantum well samples of various silicon doping conditions, including doping layers and concentrations, are compared in nano-structures and emission characteristics for design optimization. The best performance of barrier-doped samples originates from stronger carrier localization" @default.
- W2105763552 created "2016-06-24" @default.
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- W2105763552 date "2004-05-16" @default.
- W2105763552 modified "2023-09-24" @default.
- W2105763552 title "Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices" @default.
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