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- W2105936723 abstract "Summary form only given. The charge pumping technique was used to characterize bulk, SIMOX (SOI) and SOS CMOS technologies with respect to both process and radiation-induced interface-state density levels located at the top-gate silicon/silicon-dioxide interface. Results indicate that bulk and SIMOX technologies lead to nearly the same levels of process-induced and radiation-induced interface state densities, whereas SOS material has much higher levels. >" @default.
- W2105936723 created "2016-06-24" @default.
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- W2105936723 date "2003-01-13" @default.
- W2105936723 modified "2023-09-25" @default.
- W2105936723 title "Technology comparison of interface states as measured by charge pumping: bulk vs. SIMOX vs. SOS" @default.
- W2105936723 cites W2007656209 @default.
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- W2105936723 doi "https://doi.org/10.1109/soi.1989.69780" @default.
- W2105936723 hasPublicationYear "2003" @default.
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