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- W2106073586 abstract "Multi-frequency Charge Pumping (MFCP) is a widely used technique to characterize bulk trap distribution, N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> (x, E), within the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> /high-kappa dielectric. Thus far, the theoretical interpretation of MFCP has either been based on uncritical generalization of the classical CP theory of electron-hole recombination or has been interpreted as a dasiaquasi-geometricalpsila component of CP current. Moreover, the recent literature contains variants of the basic MFCP that attempts to rectify various perceived limitations of the dasiaotherpsila MFCP methods. Yet, without a comprehensive theoretical study supported by detailed numerical model of charging/discharging dynamics during the MFCP process, it is impossible to establish the relative merits of these techniques, let alone the accuracy of back-extracted N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> (x, E) by these methods. In this paper, we (i) present a physically-based numerical framework to establish that I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>CP</sub> in long, medium and short channel (L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>CH</sub> ) transistors should be understood in a fundamentally different way-none of which can be interpreted by simple generalization of the classical CP theory, (ii) compare and contrast N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> (x, E), back-extracted from different variants of MFCP (e.g., amplitude-sweep, base-level sweep, etc.) for NMOS transistors, and (iii) show that, regardless of the combination of the chosen parameters of V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Pulse</sub> (e.g., frequency: f; hi/low voltage levels: V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>H</sub> /V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>L</sub> ; high/low pulse duration: t <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>H</sub> /t <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>L</sub> ; rise/fall time: t <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>r</sub> /t <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>f</sub> ), the back-extracted N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> can only be attributed to certain patches within position-energy space, but not to unique x and/or E points. Therefore, other complementary methods must be used for a unique definition of N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> (x, E) within the modern gate dielectrics." @default.
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- W2106073586 date "2009-01-01" @default.
- W2106073586 modified "2023-10-17" @default.
- W2106073586 title "Physics and mechanisms of dielectric trap profiling by Multi-frequency Charge Pumping (MFCP) method" @default.
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- W2106073586 doi "https://doi.org/10.1109/irps.2009.5173218" @default.
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