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• W2106156022 endingPage "182" @default.
• W2106156022 startingPage "177" @default.
• W2106156022 abstract "Hot carrier reliability of the HfSiON dielectric with the TiN metal gate electrode has been studied in the nMOS and pMOS short channel transistors. Hot carrier induced degradation of the high-/spl kappa/ gate stack devices are severe than the one in the SiO/sub 2//poly devices. It is determined that total threshold voltage shift during a hot carrier stress is a sum of contributions from both hot carrier and cold carrier effects. The hot carrier contribution induces permanent damage while cold carrier contribution is shown to be reversible. The contribution from the cold carrier can be evaluated by applying a de-trapping (opposite polarity) bias after the stress." @default.
• W2106156022 created "2016-06-24" @default.
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• W2106156022 creator A5067213042 @default.
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• W2106156022 date "2005-06-01" @default.
• W2106156022 modified "2023-10-16" @default.
• W2106156022 title "Hot carrier degradation of HfSiON gate dielectrics with TiN electrode" @default.
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• W2106156022 doi "https://doi.org/10.1109/tdmr.2005.851211" @default.
• W2106156022 hasPublicationYear "2005" @default.
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