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- W2106255570 abstract "Analysis of hole transport in cascaded p-Si∕SiGe quantum well structures is performed using self-consistent rate equations simulations. The hole subband structure is calculated using the 6×6k·p model, and then used to find carrier relaxation rates due to the alloy disorder, acoustic, and optical phonon scattering, as well as hole-hole scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results are presented for prototype THzSi∕SiGe quantum cascade structures." @default.
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- W2106255570 date "2004-11-22" @default.
- W2106255570 modified "2023-10-09" @default.
- W2106255570 title "Self-consistent energy balance simulations of hole dynamics in SiGe∕SiTHz quantum cascade structures" @default.
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- W2106255570 doi "https://doi.org/10.1063/1.1805727" @default.
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