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- W2106291775 abstract "Positive-bias temperature-stress-induced degradation in p-channel poly-Si thin-film transistors is investigated. Two-stage degradation behavior is observed. In the first-stage degradation, on-state current ( <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> ) initially increases associated with a positive threshold voltage ( <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> ) shift and is then followed by a gradual <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> decrease. In the second stage, <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> shifts to the negative, and <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> significantly degrades. A comprehensive physical model is proposed to clarify the two-stage degradation behavior. The first-stage degradation is attributed to electron trapping and detrapping, whereas the second-stage degradation is dominated by positive charge generation." @default.
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- W2106291775 date "2011-10-01" @default.
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- W2106291775 title "A Two-Stage Degradation Model of p-Channel Low-Temperature Poly-Si Thin-Film Transistors Under Positive Bias Temperature Stress" @default.
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- W2106291775 doi "https://doi.org/10.1109/ted.2011.2160949" @default.
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