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- W2106398001 abstract "In this work, we investigated the stoichiometry of oxygen precipitates in Czochralski silicon wafers. The thickness dependence of the Cliff–Lorimer sensitivity factor for the silicon/oxygen system was determined and applied for the investigation of the stoichiometry of oxygen precipitates by EDX. The results show that both plate‐like oxygen precipitates and a transitional form between plate‐like and octahedral precipi‐ tates consist of SiO 2 . This was confirmed by EELS low loss spectra where the typical spectrum for amorphous SiO 2 was observed. Moreover, the absorption band of plate‐like precipitates at 1227 cm –1 was found in the low temperature FTIR spectrum. It was demonstrated that this band can only be simulated by the dielectric constants of amorphous SiO 2 . (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)" @default.
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- W2106398001 date "2015-06-29" @default.
- W2106398001 modified "2023-10-06" @default.
- W2106398001 title "Composition of oxygen precipitates in Czochralski silicon wafers investigated by STEM with EDX/EELS and FTIR spectroscopy" @default.
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- W2106398001 doi "https://doi.org/10.1002/pssr.201510194" @default.
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