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- W2106461131 abstract "Nitride-based p-i-n ultraviolet (UV) photodetectors with a low-temperature (LT) GaN interlayer were proposed and fabricated. Compared with a conventional GaN p-i-n photodetector, it was found that both the dark current and ideality factor of the p-i-n photodetector with an LT-GaN interlayer became larger whereas the UV-to-visible rejection ratio became smaller because of the poor crystal quality of the LT-GaN interlayer. However, the responsivity of the GaN p-i-n photodetector with an LT-GaN interlayer was larger than that of the conventional GaN p-i-n photodetector under a high reverse bias because of the carrier multiplication effect and/or internal gain that originated from the defect levels." @default.
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- W2106461131 date "2008-04-01" @default.
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- W2106461131 title "GaN p-i-n photodetectors with an LT-GaN interlayer" @default.
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- W2106461131 doi "https://doi.org/10.1049/iet-opt:20070057" @default.
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