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• W2106670525 startingPage "448" @default.
• W2106670525 abstract "Device related parameters of GaSb are characterized and simulated based on measurements of photovoltaic cells. Internal quantum efficiencies are simulated to quantify the contributions from band-gap narrowing and the main recombination mechanisms, such as Auger, radiative, and Shockley-Read-Hall recombination. A detailed study of the recombination mechanisms values shows differences between literature data and data derived from comparison of simulation results with measurements on real devices. A new evaluation of these data is given. The evaluation of the band-gap narrowing in n-GaSb is performed by comparison of measurements and simulations of the injection component of the dark current I/sub 01/ and open-circuit voltage. For the first time, a range of possible values for the intrinsic carrier concentration of GaSb at room temperature is given, based on theoretical calculations, and proven with comparison of measured lot and open-circuit voltages of GaSb photovoltaic devices." @default.
• W2106670525 created "2016-06-24" @default.
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• W2106670525 date "2000-02-01" @default.
• W2106670525 modified "2023-09-25" @default.
• W2106670525 title "Characterization and simulation of GaSb device-related properties" @default.
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• W2106670525 doi "https://doi.org/10.1109/16.822293" @default.
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