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• W2106977239 abstract "The surface passivation of SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> stacks prepared at low process temperatures was investigated on phosphorous diffused n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> -type Si surfaces with a broad range of sheet resistances. Two kinds of SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> films were prepared, the first with plasma-enhanced chemical vapor deposition (PECVD) and the second in a wet chemical process. After atomic layer deposition of the Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> capping layer, the resulting SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> stacks differ in the polarity of their fixed charge density, i.e., the PECVD SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> stacks had a positive and the wet chemically grown SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> stacks a negative fixed charge density. The PECVD SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> stacks resulted in a high surface passivation over a broad range of sheet resistances whereas the wet chemically grown SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> stacks were only feasible for diffused surfaces with low sheet resistances (<; 100 Ω/□). By corona charging experiments, it was established that the field effect based on a negative fixed charge density was the reason for the loss in surface passivation in the specific range of diffused surfaces." @default.
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• W2106977239 date "2013-07-01" @default.
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• W2106977239 title "Passivation of n$^{+}$-Type Si Surfaces by Low Temperature Processed SiO$_{2}$/Al$_{2}$O$_{3}$ Stacks" @default.
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