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• W2106998450 abstract "A new approach to the analytical solution of the 2-D Poisson equation including the inversion-charge density in undoped square gate-all-around metal-oxide-semiconductor field-effect transistors has been developed. We have obtained functions with different degrees of complexity to calculate the electric potential in the devices under study. The results obtained are compared with the data simulated by solving the Poisson equation numerically. A good fit is achieved both for the electric potential and the inversion charge, which are calculated by means of Gauss's law." @default.
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• W2106998450 date "2011-09-01" @default.
• W2106998450 modified "2023-09-26" @default.
• W2106998450 title "An Inversion-Charge Analytical Model for Square Gate-All-Around MOSFETs" @default.
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• W2106998450 doi "https://doi.org/10.1109/ted.2011.2159222" @default.
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