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• W2107084791 abstract "This letter reports the first 4H-SiC power bipolar junction transistor (BJT) with double base epilayers which is completely free of ion implantation and hence of implantation-induced crystal damages and high-temperature activation annealing-induced surface roughness. Based on this novel design and implantation-free process, a 4H-SiC BJT was fabricated to reach an open base collector-to-emitter blocking voltage of over 1300 V, with a common-emitter current gain up to 31. Improvements on reliability have also been observed, including less forward voltage drift (< 2%) and no significant degradation on current gain in the active region." @default.
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• W2107084791 date "2008-05-01" @default.
• W2107084791 modified "2023-09-26" @default.
• W2107084791 title "Implantation-Free 4H-SiC Bipolar Junction Transistors With Double Base Epilayers" @default.
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• W2107084791 doi "https://doi.org/10.1109/led.2008.920273" @default.
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