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- W2107106076 abstract "GaAs-based edge-emitting diode lasers designed for the near-infrared spectral region usually contain waveguide and cladding layers consisting of Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> As. Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> As-on-GaAs is known to be almost perfectly lattice matched. We have grown Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> As <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> P <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-y</sub> /Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> As test samples targeting a partial compensation of the room temperature wafer bow by incorporating up to 4% phosphorus in Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.85</sub> GaAs. The proposed strain compensation scheme has been applied in complete laser devices by partially replacing Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.85</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.15</sub> As with Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.85</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.15</sub> As <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> P <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-y</sub> . The results will be discussed." @default.
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- W2107106076 date "2012-08-01" @default.
- W2107106076 modified "2023-09-25" @default.
- W2107106076 title "Investigation of GaAs based MOVPE-grown AlxGa1−xAsyP1−y strain compensating layers" @default.
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- W2107106076 doi "https://doi.org/10.1109/iciprm.2012.6403316" @default.
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