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- W2107274245 abstract "The kinetics of anisotropic β-Si3N4 grain growth in silicon nitride ceramics were studied. Specimens were sintered at temperatures ranging from 1600° to 1900°C under 10 atm of nitrogen pressure for various lengths of time. The results demonstrate that the grain growth behavior of β-Si3N4 grains follows the empirical growth law Dn– D0n=kt, with the exponents equaling 3 and 5 for length [001] and width [210] directions, respectively. Activation energies for grain growth were 686 kJ/mol for length and 772 kJ/mol for width. These differences in growth rate constants and exponents for length and width directions are responsible for the anisotropy of β-Si3N4 growth during isothermal grain growth. The resultant aspect ratio of these elongated grains increases with sintering temperature and time." @default.
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- W2107274245 date "1993-01-01" @default.
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- W2107274245 title "Kinetics of beta-Si3N4 Grain Growth in Si3N4 Ceramics Sintered under High Nitrogen Pressure" @default.
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- W2107274245 doi "https://doi.org/10.1111/j.1151-2916.1993.tb03693.x" @default.
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